Heterostructure Epitaxy and Devices. Nato Science Partnership Subseries: 3.
Heterostructure Epitaxy and Devices. Series Volume. Series: Nato Science Partnership Subseries: 3, Vol. 44. Derouane, . Haber, . Lemos, . Ramôa Ribeiro, . Guisnet, M. (Ed. 11. Novák, Josef, Schlachetzki, A. 1996. 1998.
Informationen zum Titel Heterostructure Epitaxy and Devices aus der Reihe Nato Science Partnership .
Informationen zum Titel Heterostructure Epitaxy and Devices aus der Reihe Nato Science Partnership Subseries: 3 . . Heterostructure Epitaxy and Devices HEAD '97 (NATO Science Partnership Sub-Series: 3:) series. authors. Peter Kordos (Ed. Josef Novak (Ed. data.
Автор: Josef Nov?k; A. Schlachetzki Название: Heterostructure Epitaxy and Devices Издательство: Springer . This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices.
This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices.
Peter Kordos, Josef Novak.
Heterostructure Epitaxy and Devices book. The intention of this Workshop was to establish and strengthen ties between scientists of the formerly Socialist East and Middle-European states with their colleagues from the Western countries.
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Enter Zip Code or city, state. Error: Please enter a valid ZIP code or city and state. Good news - You can still get free 2-day shipping, free pickup, & more. Try another ZIP code. Generated at Wed, 20 Nov 2019 22:56:01 GMT exp-ck: undefined; xpa: undefined; Electrode, Comp-845276077, DC-prod-dfw02, ENV-prod-a, PROF-PROD, VER-19. 31, 2e21, 8b0798443e4, Generated: Wed, 20 Nov 2019 22:56:01 GMT. Books. Schlachetzki Название: Heterostructure Epitaxy and Devices ISBN: 9401065934 ISBN-13(EAN) . The topic of this book is the physical modeling of modern submicron heterostructure devices
The topic of this book is the physical modeling of modern submicron heterostructure devices. In particular, a detailed discussion of models and parameters for compound semiconductors is presented.